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Call for abstracts

The authors are encouraged to submit a camera-ready abstract (A4-size with 25 mm margins on all sides) and a short summary (150 words) of the abstract. The abstract must be completed within 1 page without any figures and tables. The authors are recommended to add one page for supplementary information, in which figures and tables can be included. Note that only the first page of the abstract will be published in the electronic version of an abstract book (stored in a USB flash drive), whereas the entire two pages are used for a refereeing purpose. The 150-word short summary will be published in a paper-based abstract book. Authors are asked to submit their abstracts via the submission form.

Deadline for abstract submission: June 29, 2018
Abstract Template

About workshop

The International Workshop on Nitride Semiconductors 2018 (IWN 2018) will be held in Kanazawa, Japan, from November 11 to 16, 2018. The nine previous workshops were held in Nagoya, Japan (IWN 2000); Aachen, Germany (IWN 2002); Pittsburgh, USA (IWN 2004); Kyoto, Japan (IWN 2006); Montreux, Switzerland (IWN 2008); Tampa, USA (IWN 2010); Sapporo, Japan (IWN 2012), Wrocław, Poland (IWN 2014); and Orland, USA (IWN 2016).
IWN 2018 will be organized as a combination of four independent workshops. In each workshop, in-depth discussions will be held on a focused aspect of the essential physics and chemistry underlying the critical issues associated with nitride materials. These scientific activities will contribute to breakthroughs related to critical technological barriers that need to be overcome to improve the performances of nitride devices.

Final Call for Paper

Important Dates

October 1, 2018     Deadline for Early Registration
June 29, 2018        Deadline for Abstract Submission
October 24, 2016   Workshop website has opened
   

Contact

IWN2018 secretariat
E-mail: secretary@iwn2018.jp